Anomalous Surface Amorphization of Si(001) Induced by 3–5 keV Ar + Ion Bombardment

The process of amorphization of Si(001) by 3–5 keV Ar + ion bombardment is investigated using high-resolution Rutherford backscattering spectroscopy (RBS)/channeling with a depth resolution of ∼0.6 nm. Particular emphasis is placed on the effect of knocked-in oxygen atoms from a native oxide layer w...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001, Vol.40 (4R), p.2119
Main Authors: Kaoru Nakajima, Kaoru Nakajima, Hisami Toyofuku, Hisami Toyofuku, Kenji Kimura, Kenji Kimura
Format: Article
Language:English
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Summary:The process of amorphization of Si(001) by 3–5 keV Ar + ion bombardment is investigated using high-resolution Rutherford backscattering spectroscopy (RBS)/channeling with a depth resolution of ∼0.6 nm. Particular emphasis is placed on the effect of knocked-in oxygen atoms from a native oxide layer which usually exists at the surface in the industrial processes. No essential difference is observed in the amorphization process between the Si(001) wafers with and without a native oxide layer, showing no important role of the knocked-in oxygen in the amorphization process. The amorphization is found to proceed from the surface instead of from the projected range of the implanted ions or the peak depth of the ion-induced defects. The observed results can be explained in terms of preferential defect clustering at surfaces.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.2119