Hydrogen-Robust Submicron IrO x /Pb(Zr, Ti)O 3 /Ir Capacitors for Embedded Ferroelectric Memory

• Published in: Japanese Journal of Applied Physics 2001-04, Vol.40 (4S), p.2911
• Main Authors: Sakoda, Tomoyuki, Moise, Theodore S., Summerfelt, Scott R., Colombo, Luigi, Xing, Guoqiang, Gilbert, Stephen R., Loke, Alvin L. S., Ma, Shawming, Kavari, Rahim, Wills, Laura A., Amano, Jun
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.40.2911

We have demonstrated that the scaling of IrO x (Pb(Zr, Ti)O 3 :PZT)/Ir capacitors can be extended into the submicron regime. The submicron IrO x /PZT/Ir capacitors were fabricated using a one-mask stack-etch process, integrated with an SiO 2 interlayer dielectric, and contacted with Al metallization. The aggregate electrical properties of integrated PZT capacitor arrays are shown to be nearly independent of individual capacitor area in the range between 10 2 µm 2 and 0.12 µm 2 . In particular, switched polarization values of more than 30 µC/cm 2 were obtained for PZT capacitors with an individual capacitor area of 0.12 µm 2 . This result suggests that the lateral scaling can be achieved down to 0.1 µm 2 . Through the use of appropriate diffusion barriers, hydrogen-robust submicron PZT capacitors are obtained. No degradation in ferroelectric properties of submicron PZT capacitors was observed under the test conditions. These results suggest that PZT capacitors can be integrated into a standard complementary metal oxide semiconductor (CMOS) process flow with minimal degradation.