A Body-Effect-Assisted NOR-type (BeNOR) Multilevel Flash Memory

We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for multilevel storage application. Body effect assisted self-convergent programming employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately progra...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-04, Vol.40 (4S), p.2954
Main Authors: Wang, Yen-Sen, Tsai, Hong-Ping, Yang, Evans Ching-Song, King, Ya-Chin, Chen, Steve, Hsu, Charles Ching-Hsiang
Format: Article
Language:English
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Summary:We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for multilevel storage application. Body effect assisted self-convergent programming employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately programmed states are accomplished by the linear dependence of V TH on the bit-line voltage; therefore, parallel multilevel programming and elimination or reduction of bit-by-bit verification can be achieved. In this paper, programming power consumption and reliability considerations are also assessed for efficient and long-term operation.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.2954