Galvanomagnetic Effect and Magnetization Process in CoO/Co/NiFe Film with Antidot Array

The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in ad...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-07, Vol.40 (7R), p.4524
Main Authors: Kimura, Takashi, Wakaya, Fujio, Gamo, Kenji
Format: Article
Language:English
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Summary:The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.4524