Enhancement of Photoluminescence and Electrical Properties of Ga-Doped ZnO Thin Film Grown on α-Al 2 O 3 (0001) Single-Crystal Substrate by rf Magnetron Sputtering through Rapid Thermal Annealing

Ga 2 O 3 (1 wt%)-doped ZnO (GZO) thin films were deposited on α-Al 2 O 3 (0001) by rf magnetron sputtering at 550°C and a polycrystalline structure was obtained. As-grown GZO thin films show poor electrical properties and photoluminescence (PL). For the improvement of these properties, GZO thin film...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-10, Vol.40 (10A), p.L1040
Main Authors: Jung Cho, Jung Cho, Jongbum Nah, Jongbum Nah, Min-Seok Oh, Min-Seok Oh, Jae-Hoon Song, Jae-Hoon Song, Ki-Hyun Yoon, Ki-Hyun Yoon, Hyung-Jin Jung, Hyung-Jin Jung, Won-Kook Choi, Won-Kook Choi
Format: Article
Language:English
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Summary:Ga 2 O 3 (1 wt%)-doped ZnO (GZO) thin films were deposited on α-Al 2 O 3 (0001) by rf magnetron sputtering at 550°C and a polycrystalline structure was obtained. As-grown GZO thin films show poor electrical properties and photoluminescence (PL). For the improvement of these properties, GZO thin films were annealed at 800–900°C in N 2 atmosphere for 3 min. After rapid thermal annealing, deep-defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resistivity of 2.6×10 -4 Ω·cm with 3.9×10 20 /cm 3 carrier concentration and exceptionally high mobility of 60 cm 2 /V·s. These improved physical properties are explained in terms of the translation of doped-Ga atoms from interstitial to substitutional sites.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L1040