Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy

The pore characteristics of plasma-enhanced chemical-vapor-deposition (PECVD)-grown low-dielectric-constant (low- k ) porous films, grown with dual-frequency power sources and with a source gas of hexamethyldisiloxane, have been studied by positron annihilation lifetime spectroscopy. Six low- k film...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-04, Vol.40 (4B), p.L414
Main Authors: Suzuki, Ryoichi, Ohdaira, Toshiyuki, Shioya, Yoshimi, Ishimaru, Tomomi
Format: Article
Language:English
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Summary:The pore characteristics of plasma-enhanced chemical-vapor-deposition (PECVD)-grown low-dielectric-constant (low- k ) porous films, grown with dual-frequency power sources and with a source gas of hexamethyldisiloxane, have been studied by positron annihilation lifetime spectroscopy. Six low- k films of different dielectric constants (2.66–4.13) were prepared by changing the low frequency (380 kHz) power of the PECVD process. The long-lived component due to pick-off annihilation of ortho-positronium strongly depends on the low frequency power. Based on the empirical relationship between the ortho-positronium lifetime and the cavity volume, average pore volumes were estimated to be 0.23–0.85 nm 3 . The correlation between the pore size and dielectric constant was discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L414