Properties of HfO 2 /Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction

Properties of the HfO 2 /Hf-silicate/Si structure with the Hf-silicate layer which was formed by Hf metal deposition on Si and subsequent reaction of Hf with Si and oxygen during the HfO 2 deposition were studied. Post-deposition N 2 annealing reduced the equivalent oxide thickness (EOT) value and i...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-08, Vol.40 (8A), p.L813
Main Authors: Bae, Geunhag, Lee, Hunjung, Jung, Donggeun, Kang, Hyeoksu, Roh, Yonghan, Yang, Cheol-Woong
Format: Article
Language:English
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Summary:Properties of the HfO 2 /Hf-silicate/Si structure with the Hf-silicate layer which was formed by Hf metal deposition on Si and subsequent reaction of Hf with Si and oxygen during the HfO 2 deposition were studied. Post-deposition N 2 annealing reduced the equivalent oxide thickness (EOT) value and improved leakage characteristics of the HfO 2 /Hf-silicate/Si structure. The EOT value was reduced from 2.70 nm to 2.23 nm after annealing. At a proper voltage of 2.5 V, which was defined as the difference between the applied gate bias and the flat band voltage, the leakage current density of annealed HfO 2 /Hf-silicate/Si structure was 1.88×10 -7 A/cm 2 while that of as-formed HfO 2 /Hf-silicate/Si structure was 1.92×10 -6 A/cm 2 . The breakdown field increased from 7.29 MV/cm to 9.71 MV/cm after annealing.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L813