Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-04, Vol.41 (Part 1, No. 4B), p.2445-2449
Main Authors: Lee, Hi-Deok, Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Key-Min, Park, Seong-Hyun, Jang, Myoung-Jun, Lee, Joo-Hyoung, Yoon, Ki-Seok, Choi, Jung-Hoon, Park, Geun-Suk, Kang, Keun-Koo, Park, Young-Jin
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.2445