0.1-µm-Gate Metamorphic High-Electron-Mobility Transistor on GaAs and Its Application to Source-Coupled Field-Effect Transistor Logic

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-06, Vol.42 (Part 1, No. 6A), p.3320-3323
Main Authors: Ohshima, Tomoyuki, Moriguchi, Hironobu, Hoshi, Shinichi, Itoh, Masanori, Tsunotani, Masanori, Ichioka, Toshihiko
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.3320