New Silicon-on-Insulator (SOI) Flash Memory with Side Channel and Side Floating Gate

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Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 6A), p.3361-3363
Main Authors: Choi, Hoon, Tanabe, Tadao, Kotaki, Noriyuki, Koh, Kwang Wook, Shim, Jeoung Chill, Park, Ki Tae, Kurino, Hiroyuki, Koyanagi, Mitsumasa
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Language:English
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container_end_page 3363
container_issue Part 1, No. 6A
container_start_page 3361
container_title Japanese Journal of Applied Physics
container_volume 42
creator Choi, Hoon
Tanabe, Tadao
Kotaki, Noriyuki
Koh, Kwang Wook
Shim, Jeoung Chill
Park, Ki Tae
Kurino, Hiroyuki
Koyanagi, Mitsumasa
description
doi_str_mv 10.1143/JJAP.42.3361
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source Institute of Physics IOPscience extra; Institute of Physics
title New Silicon-on-Insulator (SOI) Flash Memory with Side Channel and Side Floating Gate
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