Postgrowth Irradiation of Hydrogenated Amorphous Carbon thin Films by Low-Energy Ion Beam

Liquid crystal (LC) alignment property was investigated on hydrogenated amorphous carbon (a-C:H) thin films. a-C:H thin films were deposited by a remote plasma-enhanced chemical vapor deposition (RPECVD) method with C 2 H 2 and He gases. The surface property of a-C:H thin films was controlled by low...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4R), p.1577
Main Authors: Song, Kie Moon, Rho, Soon Joon, Ahn, Han Jin, Kim, Kyung Chan, Baik, Hong Koo, Hwang, Jeoung-Yeon, Jo, Yong-Min, Seo, Dae-Shik, Lee, Se Jong
Format: Article
Language:English
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Summary:Liquid crystal (LC) alignment property was investigated on hydrogenated amorphous carbon (a-C:H) thin films. a-C:H thin films were deposited by a remote plasma-enhanced chemical vapor deposition (RPECVD) method with C 2 H 2 and He gases. The surface property of a-C:H thin films was controlled by low-energy Ar ion beams. Ion beam irradiation results in the decrease in optical band gap and transmittance, and the increase in the I D / I G ratio of a-C:H thin films. LC alignment was generated by ion beam irradiation on the surface of a-C:H thin films. LC alignment property was affected by ion-beam-induced anisotropic sp 2 structures on the surface of a-C:H thin films.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.1577