Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy

A modified shift-and-ratio (MS&R) method of extracting the effective channel length ( L eff ) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of L eff generated by this method is more reasonable than the original shift-and-...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4S), p.1869
Main Authors: Eng, Chee-Wee, Lau, Wai-Shing, Jiang, Yao-Yao, Vigar, David, Tee, Kheng-Chok, Chan, Lap, Lim, Vanissa Sei-Wei, Trigg, Alastair
Format: Article
Language:English
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Summary:A modified shift-and-ratio (MS&R) method of extracting the effective channel length ( L eff ) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of L eff generated by this method is more reasonable than the original shift-and-ratio method with much less computation time involved. We show the correctness of the MS&R method by comparing the L eff extracted with the channel length obtained by cross-sectional scanning capacitance microscopy (SCM) measurement. In addition, we show that a higher off current corresponds to a smaller L eff measured by our method.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.1869