Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O 3 Thin Films on Structural Stabilities of Hybrid Pt/IrO 2 /Ir Stack and Single-Layer Ir Bottom Electrodes

High-temperature Pb(Zr,Ti)O 3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO 2 /Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigate...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-05, Vol.43 (5R), p.2651
Main Authors: Sun, Ho-Jung, Choi, Eun Seok, Lee, Tae Kwon, Hong, Tae Eun, Yang, Jun-Mo, Kweon, Soon Yong, Kim, Nam Kyeong, Yeom, Seung Jin, Roh, Jae-Sung, Sohn, Hyun-chul, Kim, Jin Woong
Format: Article
Language:English
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Summary:High-temperature Pb(Zr,Ti)O 3 (PZT) metal-organic chemical vapor deposition (MOCVD) at 620°C was performed on two major bottom electrode candidates, namely, a hybrid Pt/IrO 2 /Ir stack electrode and a single-layer Ir electrode. The structural stabilities of both PZT/electrode stacks were investigated. Severe interaction between PZT and the underlayered Pt films was observed, and the interaction resulted in a pyrochlore phase in the PZT film and blister-type deformation in the Pt film. On the other hand, structural stability, which served as the basis for a well-crystallized perovskite PZT film, was preserved in the case of the Ir electrode. Therefore, it could be determined that the Ir electrode as a bottom electrode was better than the Pt electrode from the point of view of the structural stability of a capacitor stack, when high-temperature MOCVD is chosen as a preparation method.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.2651