Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer

The precipitate density of interstitial oxygen in CZ silicon after nucleation and precipitate growth heat treatment was determined by investigating its crystal nature. The oxygen precipitate density in the vacancy-dominant crystal region was approximately two orders higher than that in the interstit...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-08, Vol.43 (8R), p.5095
Main Authors: Lee, Gon-Sub, Park, Ki-Hoon, Furukawa, Jun, Furuya, Hisashi, Kwack, Kae-Dal, Park, Jea-Gun
Format: Article
Language:English
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Summary:The precipitate density of interstitial oxygen in CZ silicon after nucleation and precipitate growth heat treatment was determined by investigating its crystal nature. The oxygen precipitate density in the vacancy-dominant crystal region was approximately two orders higher than that in the interstitial-silicon-dominant region. In addition, the oxygen precipitate density strongly depended on the nucleation temperature. The maximum nucleation of oxygen precipitates occurred at ∼800°C for the vacancy-dominant region and at ∼700°C for the interstitial-silicon-dominant crystal region.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.5095