Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-11, Vol.43 (11B), p.7843-7847
Main Authors: Miyamura, Makoto, Masuzaki, Koji, Watanabe, Heiji, Ikarashi, Nobuyuki, Tatsumi, Toru
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.7843