Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

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Published in:Japanese Journal of Applied Physics 2004-11, Vol.43 (11B), p.7843-7847
Main Authors: Miyamura, Makoto, Masuzaki, Koji, Watanabe, Heiji, Ikarashi, Nobuyuki, Tatsumi, Toru
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Language:English
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container_title Japanese Journal of Applied Physics
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creator Miyamura, Makoto
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source IOPscience journals; Institute of Physics
title Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure
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