Electrical and Structural Characteristics of High- k Gate Dielectrics with Epitaxial Si 3 N 4 Interfacial Layer on Si(111)

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-12, Vol.43 (12), p.7926-7928
Main Authors: Sim, Hyunjun, Samantaray, Chandan B., Lee, Taeho, Yeom, Hanwoong, Hwang, Hyunsang
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.7926