Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method

Annealing behaviors of interstitial nitrogen pairs (N-N pairs) in Czochralski (CZ) silicon are investigated by infrared absorption measurement. The annealing processes at 1000°C and 1100°C decrease the intensity of the infrared absorption peak at 963 cm -1 , which is caused by the N-N pairs. The 963...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4A), p.L436
Main Authors: Tanahashi, Katsuto, Yamada-Kaneta, Hiroshi, Inoue, Naohisa
Format: Article
Language:English
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Summary:Annealing behaviors of interstitial nitrogen pairs (N-N pairs) in Czochralski (CZ) silicon are investigated by infrared absorption measurement. The annealing processes at 1000°C and 1100°C decrease the intensity of the infrared absorption peak at 963 cm -1 , which is caused by the N-N pairs. The 963 cm -1 peak disappears during the annealing processes at 1000°C and 1100°C for 90 min and 30 min, respectively. It is proposed that the N-N pairs aggregate on grown-in void defects and/or grown-in oxide precipitates during annealing.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.L436