Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method

High quality epitaxial β-FeSi 2 thin films prepared by alternate Fe/Si multilayers stacking were doped for p -type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi 2 films before doping were n -type with residual electron concen...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4A), p.L504
Main Authors: Liu, Zhengxin, Osamura, Masato, Ootsuka, Teruhisa, Wang, Shinan, Kuroda, Ryo, Fukuzawa, Yasuhiro, Suzuki, Yasuhito, Mise, Takahiro, Otogawa, Naotaka, Nakayama, Yasuhiko, Tanoue, Hisao, Makita, Yunosuke
Format: Article
Language:English
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Summary:High quality epitaxial β-FeSi 2 thin films prepared by alternate Fe/Si multilayers stacking were doped for p -type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi 2 films before doping were n -type with residual electron concentration of about 2 ×10 17 cm -3 and mobility of about 200 cm 2 /V·s. After doping with boron, β-FeSi 2 films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of p -type β-FeSi 2 films with net hole concentration from 3 ×10 17 to 1 ×10 19 cm -3 and mobility from 100 to 20 cm 2 /V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.L504