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Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method
High quality epitaxial β-FeSi 2 thin films prepared by alternate Fe/Si multilayers stacking were doped for p -type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi 2 films before doping were n -type with residual electron concen...
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| Published in: | Japanese Journal of Applied Physics 2004-04, Vol.43 (4A), p.L504 |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c804-5c5f73f07d1cee45925a1760eaa7012dc4bf5ba3cdb416d79f391b3446a08c773 |
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| cites | cdi_FETCH-LOGICAL-c804-5c5f73f07d1cee45925a1760eaa7012dc4bf5ba3cdb416d79f391b3446a08c773 |
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| container_issue | 4A |
| container_start_page | L504 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 43 |
| creator | Liu, Zhengxin Osamura, Masato Ootsuka, Teruhisa Wang, Shinan Kuroda, Ryo Fukuzawa, Yasuhiro Suzuki, Yasuhito Mise, Takahiro Otogawa, Naotaka Nakayama, Yasuhiko Tanoue, Hisao Makita, Yunosuke |
| description | High quality epitaxial β-FeSi
2
thin films prepared by alternate Fe/Si multilayers stacking were doped for
p
-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi
2
films before doping were
n
-type with residual electron concentration of about 2 ×10
17
cm
-3
and mobility of about 200 cm
2
/V·s. After doping with boron, β-FeSi
2
films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of
p
-type β-FeSi
2
films with net hole concentration from 3 ×10
17
to 1 ×10
19
cm
-3
and mobility from 100 to 20 cm
2
/V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target. |
| doi_str_mv | 10.1143/JJAP.43.L504 |
| format | article |
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2
thin films prepared by alternate Fe/Si multilayers stacking were doped for
p
-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi
2
films before doping were
n
-type with residual electron concentration of about 2 ×10
17
cm
-3
and mobility of about 200 cm
2
/V·s. After doping with boron, β-FeSi
2
films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of
p
-type β-FeSi
2
films with net hole concentration from 3 ×10
17
to 1 ×10
19
cm
-3
and mobility from 100 to 20 cm
2
/V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.43.L504</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2004-04, Vol.43 (4A), p.L504</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c804-5c5f73f07d1cee45925a1760eaa7012dc4bf5ba3cdb416d79f391b3446a08c773</citedby><cites>FETCH-LOGICAL-c804-5c5f73f07d1cee45925a1760eaa7012dc4bf5ba3cdb416d79f391b3446a08c773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Liu, Zhengxin</creatorcontrib><creatorcontrib>Osamura, Masato</creatorcontrib><creatorcontrib>Ootsuka, Teruhisa</creatorcontrib><creatorcontrib>Wang, Shinan</creatorcontrib><creatorcontrib>Kuroda, Ryo</creatorcontrib><creatorcontrib>Fukuzawa, Yasuhiro</creatorcontrib><creatorcontrib>Suzuki, Yasuhito</creatorcontrib><creatorcontrib>Mise, Takahiro</creatorcontrib><creatorcontrib>Otogawa, Naotaka</creatorcontrib><creatorcontrib>Nakayama, Yasuhiko</creatorcontrib><creatorcontrib>Tanoue, Hisao</creatorcontrib><creatorcontrib>Makita, Yunosuke</creatorcontrib><title>Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method</title><title>Japanese Journal of Applied Physics</title><description>High quality epitaxial β-FeSi
2
thin films prepared by alternate Fe/Si multilayers stacking were doped for
p
-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi
2
films before doping were
n
-type with residual electron concentration of about 2 ×10
17
cm
-3
and mobility of about 200 cm
2
/V·s. After doping with boron, β-FeSi
2
films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of
p
-type β-FeSi
2
films with net hole concentration from 3 ×10
17
to 1 ×10
19
cm
-3
and mobility from 100 to 20 cm
2
/V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotj9FKwzAYRoMoWKd3PkAewNT8yZ9mBW_m3NRRUVjvS5omWtmWktaLvpYP4jO5oleHDz4OHEKugacAKG83m8VbijItFMcTkoBEzZBn6pQknAtgmAtxTi76_vM4M4WQkLv7EMOBPoSuPbxTHyLtWDl2jv58s7XbtlTQdbvb97Qe6bb7GgYXp-OLGz5Cc0nOvNn17uqfM1KuV-XyiRWvj8_LRcHsnCNTVnktPdcNWOdQ5UIZ0Bl3xmgOorFYe1UbaZsaIWt07mUOtUTMDJ9breWM3PxpbQx9H52vutjuTRwr4NUUXk3h1ZFTuPwFnJNKcQ</recordid><startdate>20040401</startdate><enddate>20040401</enddate><creator>Liu, Zhengxin</creator><creator>Osamura, Masato</creator><creator>Ootsuka, Teruhisa</creator><creator>Wang, Shinan</creator><creator>Kuroda, Ryo</creator><creator>Fukuzawa, Yasuhiro</creator><creator>Suzuki, Yasuhito</creator><creator>Mise, Takahiro</creator><creator>Otogawa, Naotaka</creator><creator>Nakayama, Yasuhiko</creator><creator>Tanoue, Hisao</creator><creator>Makita, Yunosuke</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040401</creationdate><title>Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method</title><author>Liu, Zhengxin ; Osamura, Masato ; Ootsuka, Teruhisa ; Wang, Shinan ; Kuroda, Ryo ; Fukuzawa, Yasuhiro ; Suzuki, Yasuhito ; Mise, Takahiro ; Otogawa, Naotaka ; Nakayama, Yasuhiko ; Tanoue, Hisao ; Makita, Yunosuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c804-5c5f73f07d1cee45925a1760eaa7012dc4bf5ba3cdb416d79f391b3446a08c773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Zhengxin</creatorcontrib><creatorcontrib>Osamura, Masato</creatorcontrib><creatorcontrib>Ootsuka, Teruhisa</creatorcontrib><creatorcontrib>Wang, Shinan</creatorcontrib><creatorcontrib>Kuroda, Ryo</creatorcontrib><creatorcontrib>Fukuzawa, Yasuhiro</creatorcontrib><creatorcontrib>Suzuki, Yasuhito</creatorcontrib><creatorcontrib>Mise, Takahiro</creatorcontrib><creatorcontrib>Otogawa, Naotaka</creatorcontrib><creatorcontrib>Nakayama, Yasuhiko</creatorcontrib><creatorcontrib>Tanoue, Hisao</creatorcontrib><creatorcontrib>Makita, Yunosuke</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Zhengxin</au><au>Osamura, Masato</au><au>Ootsuka, Teruhisa</au><au>Wang, Shinan</au><au>Kuroda, Ryo</au><au>Fukuzawa, Yasuhiro</au><au>Suzuki, Yasuhito</au><au>Mise, Takahiro</au><au>Otogawa, Naotaka</au><au>Nakayama, Yasuhiko</au><au>Tanoue, Hisao</au><au>Makita, Yunosuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2004-04-01</date><risdate>2004</risdate><volume>43</volume><issue>4A</issue><spage>L504</spage><pages>L504-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>High quality epitaxial β-FeSi
2
thin films prepared by alternate Fe/Si multilayers stacking were doped for
p
-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi
2
films before doping were
n
-type with residual electron concentration of about 2 ×10
17
cm
-3
and mobility of about 200 cm
2
/V·s. After doping with boron, β-FeSi
2
films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of
p
-type β-FeSi
2
films with net hole concentration from 3 ×10
17
to 1 ×10
19
cm
-3
and mobility from 100 to 20 cm
2
/V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.</abstract><doi>10.1143/JJAP.43.L504</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2004-04, Vol.43 (4A), p.L504 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_43_L504 |
| source | Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | Boron Doping for p-Type β-FeSi 2 Films by Sputtering Method |
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