Analysis of the Photochemical Reaction on the Surface for Room Temperature Deposition of SiO 2 Thin Films by Photo-CVD using Vacuum Ultraviolet Light

We have analyzed the photochemical reaction for the deposition of SiO 2 thin films at room temperature in photo-CVD using a vacuum ultraviolet (VUV) excimer lamp with reflection-absorption spectroscopy using a Fourier transform infrared spectrometer (RAS-FTIR). Tetraethoxyorthosilicate (TEOS) was us...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-02, Vol.44 (2R), p.1019
Main Authors: Yokotani, Atsushi, Amari, Kouichi, Maezono, Yoshinari, Toshikawa, Kiyohiko, Kurosawa, Kou
Format: Article
Language:English
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Summary:We have analyzed the photochemical reaction for the deposition of SiO 2 thin films at room temperature in photo-CVD using a vacuum ultraviolet (VUV) excimer lamp with reflection-absorption spectroscopy using a Fourier transform infrared spectrometer (RAS-FTIR). Tetraethoxyorthosilicate (TEOS) was used as a precursor and two types of excimer lamps were used as light sources. The reaction in VUV-CVD is divided into two stages: the reaction in the vapor phase, and the reaction on the surface of the substrate. In this work, we analyzed the latter stage. As a result of analyzing the spectra obtained, it was found that the main reaction for the formation of the SiO 2 film was in the latter stage, in which the dissociation of Si–O bonds in Si–O–CH 2 in the adsorbed fragments was preceded by the photo-dissociation of C 2 H 5 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.1019