Evaluation of the Correspondence between Carbon Incorporation and the Development of c(4×4) Domains

• Published in: Japanese Journal of Applied Physics 2005-04, Vol.44 (4R), p.1915
• Main Authors: Harashima, Masayuki, Yasui, Kanji, Moriyama, Manabu, Takata, Masasuke, Akahane, Tadashi
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.44.1915

Using the temperature programmed desorption (TPD) method and a scanning tunneling microscope (STM), the correspondence between carbon incorporation into a Si(001) substrate and the development of a c(4×4) area on a surface has been investigated. In TPD spectra, γ peaks have been observed for substrates exposed to various amounts of monomethylsilane (MMS) at 660°C, which indicates the occurrence of carbon incorporation into the subsurface layer. From estimations, it has been found that the area of a γ peak is increased with exposure time. On the other hand, STM images have revealed that a c(4×4) surface consists of both (2×1) domains and c(4×4) domains. As the amount of MMS exposure increases, the c(4×4) domain expands and the entire surface is covered with a c(4×4) structure at 280 L. By comparing the area of a γ peak with the c(4×4) coverage at each exposure condition, it has been found that the relationship between them is approximately linear.