Novel Extraction Method for Size-Dependent Mobility Based on BSIM3-Like Compact Model

We applied a BSIM3-like compact model in order to analyze size dependent low field mobility in MOSFETs. By using the newly proposed extraction method, we have successfully extracted the gate length dependence of mobility degradation due to halo doping and the mobility enhancement due to mechanical s...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2424
Main Authors: Tanaka, Takuji, Goto, Ken-ichi, Nakamura, Ryou, Satoh, Shigeo
Format: Article
Language:English
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Summary:We applied a BSIM3-like compact model in order to analyze size dependent low field mobility in MOSFETs. By using the newly proposed extraction method, we have successfully extracted the gate length dependence of mobility degradation due to halo doping and the mobility enhancement due to mechanical stress. Moreover, parasitic resistance at source and drain R sd has been accurately extracted in a variable mobility case. The new method is applicable to wide ranges of device sizes, structures and materials.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.2424