InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate

A quasi-buried heterostructure (BH) quantum wire (QWR)-distributed feedback (DFB) laser was realized by one-time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a submicron grating. One-time selective MOCVD led to the formation of a ridge waveguide with a BH struct...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2546
Main Authors: Takasuka, Yasuyuki, Yonei, Kenji, Yamauchi, Hiromi, Ogura, Mutsuo
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A quasi-buried heterostructure (BH) quantum wire (QWR)-distributed feedback (DFB) laser was realized by one-time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a submicron grating. One-time selective MOCVD led to the formation of a ridge waveguide with a BH structure and a QWR array for gain-guided DFB laser diode (LD) without additional etching or regrowth process. The threshold current is 15 mA, and the threshold current density is 850 A/cm 2 . A stable single longitudinal mode was preserved until 3 I th , after which another mode emerged at a high drive current at 813.6 nm. This suggests a complex-coupled DFB-mode operation. The elimination of the regrowth step enlarges the range of material for extended wavelengths and operational temperatures.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.2546