Effect of Carrier Distribution on Carrier Cooling in GaAs/AlGaAs Quantum Wells

A quantitative study of the effect of carrier–carrier scattering on carrier distribution in two-dimensional systems is carried out by means of calculations using the dynamically screened Boltzmann equation. Photoexcited carrier relaxation processes in both n-type-doped and undoped quantum wells (QWs...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-07, Vol.44 (7R), p.4799
Main Authors: Sun, Kien Wen, Huang, Chu Long, Chen, Jyong Wun
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A quantitative study of the effect of carrier–carrier scattering on carrier distribution in two-dimensional systems is carried out by means of calculations using the dynamically screened Boltzmann equation. Photoexcited carrier relaxation processes in both n-type-doped and undoped quantum wells (QWs) are also studied by time-resolved photoluminescence measurements using an up-conversion technique with a high time resolution of approximately 120 fs. By measuring the time evolution of the photoluminescence (PL) intensity, the scattering rate of electrons into the conduction band minimum is obtained directly. Our simulations and experimental results demonstrate that the presence of the cool distribution does affect the carrier–carrier scattering rates significantly.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.4799