Interface Control between Pentacene Film and Si(001) by Chemisorbed Buffer Monolayer

• Published in: Japanese Journal of Applied Physics 2005-01, Vol.44 (1S), p.514
• Main Authors: Wakatsuchi, Masayuki, Kato, Hiroyuki S., Yamada, Taro, Kawai, Maki
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.44.514

Pentacene films were fabricated by molecular beam deposition on two silicon (Si) substrates. One of the substrates was Si(001) with a chemisorbed 1,4-cyclohexadiene surfactant buffer and the other was Si(001) with a SiO 2 oxide layer. The 1,4-cyclohexadiene buffered surface was characterized by high-resolution electron energy loss spectroscopy (HREELS). 1,4-cyclohexadiene molecules were adsorbed on the clean Si(001) (2×1) substrate forming Si-C covalent bonds at 300 K and a well-ordered (2×1) structure was preserved even after adsorption of the molecules. The chemisorbed 1,4-cyclohexadiene layer is thermally stable at approximately room temperature. The morphology and crystallinity of the pentacene films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, respectively. The AFM images showed larger grains exceeding 1 µm for the pentacene film deposited on the Si(001) substrate with 1,4-cyclohexadiene buffer, whereas the small grains of 200 nm on average were observed for the film on Si(001) with SiO 2 under the same deposition rate and substrate temperature.