Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH 3

The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200–1570°C in a NH 3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepare...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-01, Vol.44 (1S), p.673
Main Authors: Liu, YingShen, Hashimoto, Susumu, Abe, Katsuya, Hayashibe, Rinpei, Yamakami, Tomohiko, Nakao, Masato, Kamimura, Kiichi
Format: Article
Language:English
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Summary:The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200–1570°C in a NH 3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepared at lower than 1400°C was estimated to be less than 10 nm. The higher nitridation temperature resulted in the formation of a thicker surface layer. XPS measurement showed that the surface layer was composed of N, Si, C and O. Peaks corresponding to α-Si 3 N 4 were detected in the Raman spectra and the XRD patterns of the sample prepared at higher than 1500°C, indicating the crystallization of the nitrided layer.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.673