Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films

We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge–Mn intermetallic compounds, such as Mn 5 Ge 3 . Magnetic circular dichroism meas...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-01, Vol.44 (11L), p.L1426
Main Authors: Sugahara, Satoshi, Lee, Kok Leong, Yada, Shinsuke, Tanaka, Masaaki
Format: Article
Language:English
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Summary:We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge–Mn intermetallic compounds, such as Mn 5 Ge 3 . Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p–d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge 1- x Mn x clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge 1- x Mn x was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge 1- x Mn x clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L1426