Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements

Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-01, Vol.44 (2L), p.L334
Main Authors: Saito, Ichitaro, Oonuki, Kousuke, Yamada, Takatoshi, Aono, Masami, Butler, Tim, Rupesinghe, Nalin L., Amaratunga, Gehan A. J., Milne, William I., Okano, Ken
Format: Article
Language:English
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Summary:Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As 2 Se 3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L334