High-Bandwidth Si-Based Metal Oxide Semiconductor/Silicon-on-Insulator Photodetectors for Optical Communications

Novel Si-on-insulator metal oxide semiconductor (SOI MOS) photodetectors can reach a high bandwidth (22 GHz) and are fully compatible with ultralarge-scale integration (ULSI) technology. Using a the thick buried oxide in the substrate, the diffusion current can be eliminated and the device speed is...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-01, Vol.44 (5L), p.L704
Main Authors: Chang, Shu-Tong, Liang, Chi-Yuan, Hsu, Buo-Chin
Format: Article
Language:English
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Summary:Novel Si-on-insulator metal oxide semiconductor (SOI MOS) photodetectors can reach a high bandwidth (22 GHz) and are fully compatible with ultralarge-scale integration (ULSI) technology. Using a the thick buried oxide in the substrate, the diffusion current can be eliminated and the device speed is determined by drift current. The device structure can be optimized by tuning the doping concentration of the buffer layer and the thickness of the epilayers. The analytical model for detector bandwidth are also proposed, and the results fit the simulation well.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L704