Sensitivity Characteristics of Positive and Negative Resists at 200 kV Electron-Beam Lithography

The contrast curve of positive and negative electron-beam resists such as polymethylmethacrylate (PMMA), ZEP520A, and hydrogen silsesquioxane (HSQ) at 200 kV electron-beam was estimated by using continuous slow down approximation (CSDA) model with both non-relativistic and relativistic Bethe stoppin...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-01, Vol.44 (1L), p.L95
Main Authors: Kim, Byung-Sung, Lee, Hyo-Sung, Wi, Jung-Sub, Jin, Kyung-Bae, Kim, Ki-Bum
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The contrast curve of positive and negative electron-beam resists such as polymethylmethacrylate (PMMA), ZEP520A, and hydrogen silsesquioxane (HSQ) at 200 kV electron-beam was estimated by using continuous slow down approximation (CSDA) model with both non-relativistic and relativistic Bethe stopping power. Experimental results show that simple CSDA model well explains the overall response of these various electron-beam resists to high energy electron-beam only if we use the relativistic Bethe stopping power. The difference between non-relativistic and relativistic Bethe stopping power is discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L95