Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2006-04, Vol.45 (4S), p.2961
Main Authors: Yon, Guk-Hyon, Buh, Gyoung Ho, Park, Tai-su, Hong, Soo-Jin, Shin, Yu Gyun, Chung, U-In, Moon, Joo-Tae
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.2961