Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2006-04, Vol.45 (4S), p.3198
Main Authors: Heo, Jang-Eun, Bae, Byoung-Jae, Yoo, Dong-Chul, Nam, Sang-Don, Lim, Ji-Eun, Im, Dong-Hyun, Joo, Suk-Ho, Jung, Yong-Ju, Choi, Suk-Hun, Park, Soon-Oh, Kim, Hee-Seok, Chung, U-In, Moon, Joo-Tae
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.3198