Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer

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Published in:Japanese Journal of Applied Physics 2006-04, Vol.45 (4S), p.3198
Main Authors: Heo, Jang-Eun, Bae, Byoung-Jae, Yoo, Dong-Chul, Nam, Sang-Don, Lim, Ji-Eun, Im, Dong-Hyun, Joo, Suk-Ho, Jung, Yong-Ju, Choi, Suk-Hun, Park, Soon-Oh, Kim, Hee-Seok, Chung, U-In, Moon, Joo-Tae
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cited_by cdi_FETCH-LOGICAL-c808-4b46c12aeb4e7bdb2d8a83c576774729e9424f8d33f5c736c732706224050293
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container_issue 4S
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container_title Japanese Journal of Applied Physics
container_volume 45
creator Heo, Jang-Eun
Bae, Byoung-Jae
Yoo, Dong-Chul
Nam, Sang-Don
Lim, Ji-Eun
Im, Dong-Hyun
Joo, Suk-Ho
Jung, Yong-Ju
Choi, Suk-Hun
Park, Soon-Oh
Kim, Hee-Seok
Chung, U-In
Moon, Joo-Tae
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doi_str_mv 10.1143/JJAP.45.3198
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title Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer
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