Characteristics of Secondary Electron Emission Coefficient and Sputtering Yield for MgAl 2 O 4 /MgO Protective Layer in AC-Plasma Display Panels

The secondary electron emission coefficient (γ) and sputtering yield of the MgAl 2 O 4 /MgO protective layer has been investigated using γ-focused ion beam (γ-FIB) and focused ion beam (FIB) systems, respectively. The MgAl 2 O 4 /MgO protective layer has higher γ values (from 0.09 to 0.12) than the...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2006-10, Vol.45 (10R), p.7901
Main Authors: Jeoung, Jin-Man, Ko, Byung-Doc, Lee, Hye-Jung, Jung, Yong-Whan, Jung, Kang-Won, Kang, Seung-Oun, Choi, Eun Ha
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The secondary electron emission coefficient (γ) and sputtering yield of the MgAl 2 O 4 /MgO protective layer has been investigated using γ-focused ion beam (γ-FIB) and focused ion beam (FIB) systems, respectively. The MgAl 2 O 4 /MgO protective layer has higher γ values (from 0.09 to 0.12) than the single MgAl 2 O 4 protective layer (from 0.06 to 0.07) at Ne + ion energies ranging from 90 to 200 eV. Also it has been found that the secondary electron emission coefficient (γ) of the MgAl 2 O 4 /MgO protective layer is similar to that of the MgO protective layer. Moreover, the MgAl 2 O 4 /MgO protective layer has been found to have lower sputtering yields (from 0.25 to 0.35) than the MgO protective layer (from 0.36 to 0.44) for Ga + ion energies ranging from 10 to 14 keV.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.7901