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Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System

A new beryllium phosphide was discovered in a Au/AuBe/Au/p-GaP(111) thin-film system annealed at 500 °C by rapid thermal annealing (RTA). The beryllium phosphide appeared in the shape of a plate in a gold metallization layer near the GaP substrate after RTA. The crystal structure of the beryllium ph...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2006-11, Vol.45 (11R), p.8556
Main Authors: Cheng, Wei-Chun, Lin, Hsin-Li
Format: Article
Language:English
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Summary:A new beryllium phosphide was discovered in a Au/AuBe/Au/p-GaP(111) thin-film system annealed at 500 °C by rapid thermal annealing (RTA). The beryllium phosphide appeared in the shape of a plate in a gold metallization layer near the GaP substrate after RTA. The crystal structure of the beryllium phosphide belongs to the fcc Bravais lattice. The lattice constant of the beryllium phosphide is about 0.4996 nm. The formation of beryllium phosphide was confined to the cubic-to-cubic orientation relationships with that of GaP. The crystal structure of the beryllium phosphide does not pertain to those of any known binary beryllium phosphide systems. Thus, it was concluded that this beryllium phosphide, accordingly, is a new discovery.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.8556