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Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System
A new beryllium phosphide was discovered in a Au/AuBe/Au/p-GaP(111) thin-film system annealed at 500 °C by rapid thermal annealing (RTA). The beryllium phosphide appeared in the shape of a plate in a gold metallization layer near the GaP substrate after RTA. The crystal structure of the beryllium ph...
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Published in: | Japanese Journal of Applied Physics 2006-11, Vol.45 (11R), p.8556 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A new beryllium phosphide was discovered in a Au/AuBe/Au/p-GaP(111) thin-film system annealed at 500 °C by rapid thermal annealing (RTA). The beryllium phosphide appeared in the shape of a plate in a gold metallization layer near the GaP substrate after RTA. The crystal structure of the beryllium phosphide belongs to the fcc Bravais lattice. The lattice constant of the beryllium phosphide is about 0.4996 nm. The formation of beryllium phosphide was confined to the cubic-to-cubic orientation relationships with that of GaP. The crystal structure of the beryllium phosphide does not pertain to those of any known binary beryllium phosphide systems. Thus, it was concluded that this beryllium phosphide, accordingly, is a new discovery. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.45.8556 |