Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2007-11, Vol.46 (11R), p.7204
Main Authors: Hu, Chen-Ming, Wu, Yew Chung Sermon, Gong, Jun-Wei
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.7204