Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-03, Vol.47 (3S), p.1871
Main Authors: Sameshima, Toshiyuki, Matsuda, Yasuhiro, Andoh, Yasunori, Sano, Naoki
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.1871