A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology

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Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4R), p.2092
Main Authors: Hirano, Yuuichi, Tsujiuchi, Mikio, Ishikawa, Kozo, Shinohara, Hirofumi, Terada, Takashi, Maki, Yukio, Iwamatsu, Toshiaki, Eikyu, Katsumi, Uchida, Tetsuya, Obayashi, Shigeki, Nii, Koji, Tsukamoto, Yasumasa, Yabuuchi, Makoto, Ipposhi, Takashi, Oda, Hidekazu, Inoue, Yasuo
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container_issue 4R
container_start_page 2092
container_title Japanese Journal of Applied Physics
container_volume 47
creator Hirano, Yuuichi
Tsujiuchi, Mikio
Ishikawa, Kozo
Shinohara, Hirofumi
Terada, Takashi
Maki, Yukio
Iwamatsu, Toshiaki
Eikyu, Katsumi
Uchida, Tetsuya
Obayashi, Shigeki
Nii, Koji
Tsukamoto, Yasumasa
Yabuuchi, Makoto
Ipposhi, Takashi
Oda, Hidekazu
Inoue, Yasuo
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doi_str_mv 10.1143/JJAP.47.2092
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title A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology
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