Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2496
Main Authors: Toda, Akio, Nakamura, Hidetatsu, Fukai, Toshinori, Ikarashi, Nobuyuki
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.2496