Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

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Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2496
Main Authors: Toda, Akio, Nakamura, Hidetatsu, Fukai, Toshinori, Ikarashi, Nobuyuki
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Language:English
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cited_by cdi_FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403
cites cdi_FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403
container_end_page
container_issue 4S
container_start_page 2496
container_title Japanese Journal of Applied Physics
container_volume 47
creator Toda, Akio
Nakamura, Hidetatsu
Fukai, Toshinori
Ikarashi, Nobuyuki
description
doi_str_mv 10.1143/JJAP.47.2496
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_47_2496</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_47_2496</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403</originalsourceid><addsrcrecordid>eNotkE1OwzAQhS0EEqWw4wA-ACn-ix0vS2iBqlCktuvIiW0wShxkpwh2XIAVN-QkuAJppKcZzXvS-wA4x2iCMaOXi8X0ccLEhDDJD8AIUyYyhnh-CEYIEZwxScgxOInxJa08Z3gEvspn5b1p4XoIynmYZqrflG-MhmXfvbamM35Q4QPem0G1P5_fq3enTdK16VzTe71rhj7AuTOthjNrTTPATVA-upjuMdlU3IWUto3OP8EH5fvsyqgOztr0GnoPr521QTWD6_0pOLKqjebsX8dgO59tyttsubq5K6fLrKGED1ld5JywQlpJZI4QKlCNKBe1ZlI3FiNJbU64MBTrWggh65xjXejcFEwJxBAdg4u_3Cb0MQZjq9fgutSywqjao6z2KCsmqj1K-gsL4Go7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Toda, Akio ; Nakamura, Hidetatsu ; Fukai, Toshinori ; Ikarashi, Nobuyuki</creator><creatorcontrib>Toda, Akio ; Nakamura, Hidetatsu ; Fukai, Toshinori ; Ikarashi, Nobuyuki</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.47.2496</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2496</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403</citedby><cites>FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Toda, Akio</creatorcontrib><creatorcontrib>Nakamura, Hidetatsu</creatorcontrib><creatorcontrib>Fukai, Toshinori</creatorcontrib><creatorcontrib>Ikarashi, Nobuyuki</creatorcontrib><title>Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhS0EEqWw4wA-ACn-ix0vS2iBqlCktuvIiW0wShxkpwh2XIAVN-QkuAJppKcZzXvS-wA4x2iCMaOXi8X0ccLEhDDJD8AIUyYyhnh-CEYIEZwxScgxOInxJa08Z3gEvspn5b1p4XoIynmYZqrflG-MhmXfvbamM35Q4QPem0G1P5_fq3enTdK16VzTe71rhj7AuTOthjNrTTPATVA-upjuMdlU3IWUto3OP8EH5fvsyqgOztr0GnoPr521QTWD6_0pOLKqjebsX8dgO59tyttsubq5K6fLrKGED1ld5JywQlpJZI4QKlCNKBe1ZlI3FiNJbU64MBTrWggh65xjXejcFEwJxBAdg4u_3Cb0MQZjq9fgutSywqjao6z2KCsmqj1K-gsL4Go7</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Toda, Akio</creator><creator>Nakamura, Hidetatsu</creator><creator>Fukai, Toshinori</creator><creator>Ikarashi, Nobuyuki</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080401</creationdate><title>Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction</title><author>Toda, Akio ; Nakamura, Hidetatsu ; Fukai, Toshinori ; Ikarashi, Nobuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Toda, Akio</creatorcontrib><creatorcontrib>Nakamura, Hidetatsu</creatorcontrib><creatorcontrib>Fukai, Toshinori</creatorcontrib><creatorcontrib>Ikarashi, Nobuyuki</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Toda, Akio</au><au>Nakamura, Hidetatsu</au><au>Fukai, Toshinori</au><au>Ikarashi, Nobuyuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>47</volume><issue>4S</issue><spage>2496</spage><pages>2496-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.47.2496</doi></addata></record>
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ispartof Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2496
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1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_47_2496
source Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T10%3A28%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Channel%20Strain%20in%20Advanced%20Complementary%20Metal%E2%80%93Oxide%E2%80%93Semiconductor%20Field%20Effect%20Transistors%20Measured%20Using%20Nano-Beam%20Electron%20Diffraction&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Toda,%20Akio&rft.date=2008-04-01&rft.volume=47&rft.issue=4S&rft.spage=2496&rft.pages=2496-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.47.2496&rft_dat=%3Ccrossref%3E10_1143_JJAP_47_2496%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c326t-b8562489f929500080b0367bd49dcf1093f5267e31db7779b561d8d5e84a70403%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true