In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2564
Main Authors: Okamoto, Hiroki, Hokazono, Akira, Adachi, Kanna, Yasutake, Nobuaki, Itokawa, Hiroshi, Okamoto, Shintaro, Kondo, Masaki, Tsujii, Hideji, Ishida, Tatsuya, Aoki, Nobutoshi, Fujiwara, Makoto, Kawanaka, Shigeru, Azuma, Atsushi, Toyoshima, Yoshiaki
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.2564