Dependence of Carrier Lifetime of InAlAs/InGaAs High-Electron-Mobility Transistors on Gate-to-Source Voltage

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2858, Article 2858
Main Authors: Taguchi, Hirohisa, Sato, Takuro, Oura, Masashi, Iida, Tsutomu, Takanashi, Yoshifumi
Format: Article
Language:English
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ISSN:1347-4065
0021-4922
1347-4065
DOI:10.1143/JJAP.47.2858