Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-07, Vol.47 (7R), p.5409
Main Authors: Niiyama, Yuki, Ootomo, Shinya, Li, Jiang, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh, Sawano, Kentarou, Shiraki, Yasuhiro
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.5409