Growth and Characterization of SiC Films by Hot-Wire Chemical Vapor Deposition at Low Substrate Temperature Using SiF 4 /CH 4 /H 2 Mixture

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-01, Vol.47 (1S), p.566
Main Authors: Kida, Takahiro, Nagasaka, Yohei, Sakurai, Takuya, Yamakami, Tomohiko, Hayashibe, Rinpei, Abe, Katsuya, Kamimura, Kiichi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.566