Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4
Main Authors: Takahashi, Tomoya, Mukai, Takuya, Morita, Ken, Kitada, Takahiro, Isu, Toshiro
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.04C128