Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4
Main Authors: Ono, Kazuo, Kurotsuchi, Kenzo, Fujisaki, Yoshihisa, Takemura, Riichiro, Terao, Motoyasu, Takaura, Norikatsu
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.04C160