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Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si + Ion-Implantation Technique

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics 2009-06, Vol.48 (6R), p.66513
Main Authors:	Yamaguchi, Tadashi, Kashihara, Keiichiro, Kudo, Shuichi, Okudaira, Tomonori, Tsutsumi, Toshiaki, Maekawa, Kazuyoshi, Asai, Koyu, Kojima, Masayuki
Format:	Article
Language:	English
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Online Access:	Get full text
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