Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy

Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FX \text{A ) photoluminescence (PL) peak at 3.478 eV and the E 2 high phon...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DH06-04DH06-4
Main Authors: Ku, Jui-Tai, Yang, Tsung-Hsi, Chang, Jet-Rung, Wong, Yuen-Yee, Chou, Wu-Ching, Chang, Chun-Yen, Chen, Chiang-Yao
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FX \text{A ) photoluminescence (PL) peak at 3.478 eV and the E 2 high phonon Raman shift of 567 cm -1 . It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80 nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DH06