Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the $Y$-Function Technique

• Published in: Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DN06-04DN06-5
• Main Authors: Baek, Rock-Hyun, Baek, Chang-Ki, Jung, Sung-Woo, Yeoh, Yun Young, Kim, Dong-Won, Lee, Jeong-Soo, Kim, Dae M, Jeong, Yoon-Ha
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.49.04DN06

The series resistance $R_{\text{sd}}$ and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the $Y$-function technique are compared. Both n- and p-NWFETs show similar $R_{\text{sd}}$ values but n-NWFETs have larger $R_{\text{sd}}$ variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility $\mu_{0}$ but severe mobility degradation, regardless of channel length in the high gate voltage $V_{\text{gs}}$ region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility ($\mu_{0}$) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, $E_{\text{c}}$.